jul. 2005 mitsubishi hvigbt modules CM800DZ-34H high power switching use insulated type i c ................................................................... 800a v ces ....................................................... 1700v insulated type 2-element in a pack aisic baseplate application traction drives, high reliability converters / inverters, dc choppers CM800DZ-34H hvigbt (high voltage insulated gate bipolar transistor) modules outline drawing & circuit diagram dimensions in mm 3rd-version hvigbt (high voltage insulated gate bipolar transistor) modules cm g1 g2 e1 e1 e2 e2 c1 4 - m8 nuts 6 - m4 nuts c2 c2 c1 114 31.5 57 53 44 40 28 14 20 30 140 130 16 18 5 11.85 55.2 11.5 35 5 57 0.25 57 0.25 124 0.25 +2 0 6 - 7 mounting holes label screwing depth min. 16.5 screwing depth min. 7.7 38 +2 0 circuit diagram e1 c1 g1 4(e1) 3(c1) c2 e2 g2 2(c2) 1(e2)
jul. 2005 mitsubishi hvigbt modules CM800DZ-34H high power switching use insulated type hvigbt (high voltage insulated gate bipolar transistor) modules maximum ratings collector-emitter voltage gate-emitter voltage maximum power dissipation junction temperature operating temperature storage temperature isolation voltage maximum short circuit pulse width v ge = 0v, t j = 25 c v ce = 0v, t j = 25 c t c = 80 c pulse (note 1) pulse (note 1) t c = 25 c, igbt part rms, sinusoidal, f = 60hz, t = 1min. v cc = 1150v, v ces 1700v, v ge = 15v t j = 125 c collector current emitter current 1700 20 800 1600 800 1600 6200 ?0 ~ +150 ?0 ~ +125 ?0 ~ +125 4000 10 symbol item conditions unit ratings v v a a a a w c c c v s v ces v ges i c i cm i e (note 2) i em (note 2) p c (note 3) t j t op t stg v iso t psc 3rd-version hvigbt (high voltage insulated gate bipolar transistor) modules v ce = v ces , v ge = 0v, t j = 25 c v ge = v ges , v ce = 0v, t j = 25 c i c = 800a, v ge = 15v, t j = 25 c (note 4) i c = 800a, v ge = 15v, t j = 125 c (note 4) v cc = 850v, i c = 800a, v ge = 15v, t j = 25 c i e = 800a, v ge = 0v, t j = 25 c (note 4) i e = 800a, v ge = 0v, t j = 125 c (note 4) v cc = 850v, i c = 800a, v ge = 15v r g(on) = 3.3 ? , t j = 125 c, l s = 150nh inductive load v cc = 850v, i c = 800a, v ge = 15v r g(off) = 3.3 ? , t j = 125 c, l s = 150nh inductive load v cc = 850v, i c = 800a, v ge = 15v r g(on) = 3.3 ? , t j = 125 c, l s = 150nh inductive load v v min typ max 12 0.5 3.30 3.00 1.60 1.30 2.70 0.50 2.70 ma a nf nf nf c v s s mj/pulse s s mj/pulse s c mj/pulse i ces i ges c ies c oes c res q g v ec (note 2) t d(on) t r e on t d(off) t f e off t rr (note 2) q rr (note 2) e rec (note 2) symbol item conditions v ge(th) v ce(sat) limits unit 4.5 note 1. pulse width and repetition rate should be such that junction temperature (t j ) does not exceed t opmax rating (125 c). 2. the symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (fwdi). 3. junction temperature (t j ) should not exceed t jmax rating (150 c). 4. pulse width and repetition rate should be such as to cause negligible temperature rise. 6.5 electrical characteristics collector cut-off current gate-emitter threshold voltage gate leakage current collector-emitter saturation voltage input capacitance output capacitance reverse transfer capacitance total gate charge emitter-collector voltage turn-on delay time turn-on rise time turn-on switching energy turn-off delay time turn-off fall time turn-off switching energy reverse recovery time reverse recovery charge reverse recovery energy i c = 80ma, v ce = 10v, t j = 25 c v ce = 10v, f = 100khz v ge = 0v, t j = 25 c 2.60 3.10 72 9.0 3.6 6.6 2.30 2.00 350 260 300 120 5.5
jul. 2005 r th(j-c)q r th(j-c)r r th(c-f) junction to case, igbt part, 1/2 module junction to case, fwdi part, 1/2 module case to fin, grease = 1w/m k, 1/2 module k/kw k/kw k/kw thermal resistance contact thermal resistance min typ max 20.0 34.0 16.0 thermal characteristics symbol item conditions limits unit m cti d a d s l c-e(int) r c-e(int) m8 : main terminals screw m6 : mounting screw m4 : auxiliary terminals screw igbt part t c = 25 c n m kg mm mm nh m ? mounting torque mass comparative tracking index clearance distance in air creepage distance along surface internal inductance internal lead resistance min typ max 13.0 6.0 2.0 1.0 18 0.16 7.0 3.0 1.0 250 10.0 15.0 mechanical characteristics symbol item conditions limits unit hvigbt (high voltage insulated gate bipolar transistor) modules mitsubishi hvigbt modules CM800DZ-34H high power switching use insulated type 3rd-version hvigbt (high voltage insulated gate bipolar transistor) modules
jul. 2005 hvigbt (high voltage insulated gate bipolar transistor) modules mitsubishi hvigbt modules CM800DZ-34H high power switching use insulated type 3rd-version hvigbt (high voltage insulated gate bipolar transistor) modules performance curves 1000 1200 1400 1600 800 600 400 200 0 3 4 2 1 0 56 output characteristics ( typical ) collector-emitter voltage ( v ) collector current ( a ) 1000 1200 1400 1600 800 600 400 200 0 6 8 4 2 0 10 12 transfer characteristics ( typical ) gate-emitter voltage ( v ) collector current ( a ) emitter-collector voltage ( v ) 6 6 collector-emitter saturation voltage characteristics ( typical ) 5 4 3 2 0 400 800 0 1200 1600 collector current ( a ) 1 collector-emitter saturation voltage ( v ) free-wheel diode forward characteristics ( typical ) 5 4 3 2 0 400 800 0 1200 1600 emitter current ( a ) 1 t j = 25 c v ge = 15v v ge = 10v v ge = 8v v ge = 12v v ge = 20v t j = 25 c t j = 125 c v ce = 10v t j = 25 c t j = 125 c t j = 25 c t j = 125 c v ge = 15v
jul. 2005 hvigbt (high voltage insulated gate bipolar transistor) modules mitsubishi hvigbt modules CM800DZ-34H high power switching use insulated type 3rd-version hvigbt (high voltage insulated gate bipolar transistor) modules 10 2 10 3 10 1 10 0 10 0 10 -1 23 57 10 1 10 2 capacitance characteristics ( typical ) collector-emitter voltage ( v ) capacitance ( nf ) gate charge characteristics ( typical ) gate charge ( c ) gate-emitter voltage ( v ) collector current ( a ) switching energies (m j/pulse ) half-bridge switching energy characteristics ( typical ) gate resistance ( ? ) switching energies (m j/pulse ) half-bridge switching energy characteristics ( typical ) 20 16 12 8 4 0 4 6 2 0 810 1000 800 600 400 200 0 1200 800 400 0 1600 1200 800 1000 600 400 200 0 15 20 10 5 025 23 57 23 57 2 3 5 7 2 3 5 7 2 3 5 7 v cc = 850v, i c = 800a t j = 25 c e on e off e rec e off c ies c oes c res v cc = 850v, i c = 800a v ge = 15v t j = 125 c, inductive load v cc = 850v, v ge = 15v r g(on) = r g(off) = 3.3 ? t j = 125 c, inductive load e on v ge = 0v, t j = 25 c f = 100khz e rec
jul. 2005 hvigbt (high voltage insulated gate bipolar transistor) modules mitsubishi hvigbt modules CM800DZ-34H high power switching use insulated type 3rd-version hvigbt (high voltage insulated gate bipolar transistor) modules collector current ( a ) switching times ( s ) reverse recovery current ( a ) half-bridge switching time characteristics ( typical ) emitter current ( a ) reverse recovery time ( s ) free-wheel diode reverse recovery characteristics ( typical ) collector-emitter voltage ( v ) collector current ( a ) reverse bias safe operating area ( rbsoa ) 2500 2000 1500 1000 500 0 1500 1000 500 0 2000 time ( s ) transient thermal impedance characteristics normalized transient thermal impedance 23 57 1.2 1.0 0.8 0.6 0.4 0 10 -2 10 -1 10 -3 10 0 10 1 0.2 23 57 23 57 23 57 10 0 10 1 10 -1 10 -2 2 3 5 7 2 3 5 7 2 3 5 7 10 3 10 4 10 2 10 1 10 1 10 2 10 0 10 -1 10 2 10 1 23 57 10 3 10 4 23 57 23 57 2 3 5 7 2 3 5 7 2 3 5 7 2 3 5 7 2 3 5 7 2 3 5 7 10 2 10 1 23 57 10 3 10 4 23 57 23 57 v cc 1150v, v ge = +/-15v t j = 125 c, r g(off) 3.3 ? single pulse, t c = 25 c r th(j?)q = 20k/kw r th(j?)r = 34k/kw v cc = 850v, v ge = 15v r g(on) = r g(off) = 3.3 ? t j = 125 c, inductive load v cc = 850v, v ge = 15v r g(on) = r g(off) = 3.3 ? t j = 125 c, inductive load l rr t rr t d(off) t d(on) t f t r
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